i, one. 20 stern ave. springfield, new jersey 07081 u.sa MD6001 md6002 telephone: (973) 376-2922 (212)227-6005 vcb = 60v fax: (973) 376-8960 lc = 300ma pd = 500 mw one side 600 mw both sides case 32 silicon annular complementary-pair dual transistor is designed for high-speed switching circuits, dc to vhp amplifier applications and complementary cir- cuitry. pnp npn pin connections (bottom view) maximum ratings (each side) (ta = 25c unless otherwise specified) test conditions and limits are given in magnitudes only. care must be taken to in- sure the application of proper polarities for the npn or pnp transistor, respectively. rating collector-base voltage collector -emitter voltage emitter -base voltage dc collector current (limited by pd) junction temperature storage temperature total device dissipation @ t. = 25c derate above 25" c total device dissipation @ tc = 25c derate above 25"c symbol vcb vceo veb MD6001, md6002 (continued) electrical characteristics (each side) (ta = 25c unless otherwise noted) characteristic symbol | min| max) unit| off characteristics collector-base breakdown voltage uc = 10 madc, ie = 0) collector -emitter breakdown voltage* (ic - 10 madc, ib = 0) emitter-base breakdown voltage (ie = 10 /iadc, ic = 0) collector cutoff current (vce = 50 vdc, veb - 3 vdc) (v = 50 vdc, v^ = 3 vdc, t. = 150"c) v cj fcj d " base cutoff current (vce = 50 vdc, vb= 3 vdc) bvcbo bvceo* bvebo :cex !bl 60 30 5 ? ? ? ? 0.02 30 0.03 vdc vdc vdc madc jjadc on characteristics dc current gain* (ip =0.1 madc, vp = 10 vdc) MD6001 md6002 (ir = 1.0 madc, vp = 10 vdc) MD6001 ^ md6002 (lr = 10 madc, v = 10 vdc) MD6001 l ct md6002 (ir = 150 madc, vp,, = 10 vdc) MD6001 c ^ md6002 (ip = 150 madc, vp = 1 vdc) MD6001 ^ ^ md6002 (lp = 300 madc, vp., = 10 vdc) MD6001 ce md6002 base- emitter saturation voltage* (ic = 150 madc, i = 15 madc) (ic = 300 madc, ib = 30 madc) collector-emitter saturation voltage* (ic = 150 madc, ib = 15 madc) (ic = 300 madc, ib = 30 madc) hfe* v * be(sat) v * ce(sat) 20 35 25 50 35 75 40 100 20 50 20 30 ? ? 120 300 1.3 2.0 0.4 1.4 vdc vdc dynamic characteristics gain - bandwidth product (ic = 50 madc, vce = 20 vdc, f = 100 mhz ) collector output capacitance (vcb = 10 vdc, ie = 0, f = 100 khz) collector input capacitance (vn_ = 2 vdc, ip - 0, f = 100 khz) d tj c delay time rise time storage time fall time see figure 1 vcg = 30 v, vbe(oh) = 0. 5 v i_ = 150 ma, !?, = 15 ma {> t>l see figure 2 vcg = 30 v, ig = 150 ma !b1 = !b2 = 15 ma ft cob cib 4d t t lf ? ? ? ? ? -- ? 200 8 30 20 40 280 70 mhz pf pf ns ns ns ns
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